Performance Evaluation of Spin-Orbit Torque Magnetic Random-Access Memory at 77K
Magnetoresistive random-access memory (MRAM) is a competitive candidate in several applications. To characterize its performance in low temperature environments, MRAM was immersed in liquid nitrogen and subjected to a series of tests. The results demonstrate that as the temperature decreases, the electrical properties such as tunnel magnetoresistance ratio (TMR) and coercive field become more ideal, which positions MRAM as a promising candidate for low-temperature applications.
Authors
- Zhongkui Zhang (ORCID: https://orcid.org/0000-0003-3698-9802)
- Qingtao Xia (ORCID: https://orcid.org/0009-0002-4485-6823)
- Junda Qu (ORCID: https://orcid.org/0000-0001-8714-0900)
- Zhaohao Wang (ORCID: https://orcid.org/0000-0002-2999-7903)
- Dapeng Zhu
- Chao Wang (ORCID: https://orcid.org/0000-0003-4836-7648)
- Kaihua Cao (ORCID: https://orcid.org/0000-0002-5060-4465)
Institutions
- Zhejiang International Studies University (CN)
- Beihang University (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11018048
- Primary Topic
- Magnetic properties of thin films
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Beihang University
- Fundamental Research Funds for the Central Universities