Effect of H₂O₂ on Poly Silicon Chemical Mechanical Planarization Particle Defect

Chemical mechanical planarization (CMP) has been extensively applied for semiconductor manufacturing to achieve planarity. As the feature size of devices shrinks, there are more stringent demands for CMP processes. In manufacture, forming floating gate or control gate by poly silicon CMP is one of the most important processes. Wherein, defect is one of the key factors for poly silicon CMP processed. Wettability is closely related to defect performance. H<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> acts as oxidizer can increase wettability of poly-Si. In addition, excellent wettability is benefit to remove the particles from wafer surface, and good defect performance can be obtained.