Electrical Characteristics of IGZO Thin Film Transistors Fabricated by Magnetron Sputtering with Controlled Mean Free Path of Sputtered Particles

This study investigates the optimization of indium gallium zinc oxide (IGZO) thin film transistors (TFT) by refining magnetron sputtering parameters and applying post-deposition annealing. Controlling argon-to-oxygen ratios and gas flow influenced the mean free path, enhancing film density and electronic properties. X-ray photoelectron spectroscopy (XPS) confirmed that while higher oxygen ratios during deposition improved metal-oxygen bonding, post-deposition annealing was critical in minimizing defects and enhancing film stability. The optimized IGZO TFTs demonstrated a stable threshold voltage, a subthreshold swing of 100 mV/dec, and a hysteresis of 42 mV, advancing low-power oxide TFT technology.