Optimization of the Figure-of-Merit in Drain-Extended MOS with a Salicide Block Structure

This paper investigates the performance optimization of Drain-Extended MOS (DEMOS) with a Salicide Block (SAB) structure, focusing on improving the breakdown voltage (BV) and specific on-resistance (R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON,SP</inf>) to maximize the figure-of-merit (FOM) for power management applications. The study combines silicon data with TCAD simulation to analyze key structural parameters, including poly length, field plate length, slot contact length, and Ndrift-poly overlap length. Experimental results show that optimal performance is achieved by balancing these parameters, with a maximum FOM of 44.38 kW•mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. The findings highlight the trade-offs between breakdown voltage and specific on-resistance, offering valuable insights for designing high-power, low-loss power electronic devices.