Improvement of W CMP Erosion Defect and Planarization Performance

Tungsten CMP (W CMP) has been broadly applied to the major process for local as well as global planarization of integrated circuits (ICs). W CMP process is drove by chemical interaction. In addition, W slurry consists of abrasive particle, dispersants, W removal rate enhancer, pH adjustor, inhibitor, oxidizer and so on. For W CMP, minimum erosion is necessary, which is closed related to oxide inhibitor to reduce oxide loss. Low over polish pressure with excellent planarization performance and low erosion defect were investigated