Zero-defect Solutions for Automotive Semiconductor Devices Manufacturing

Automotive semiconductor devices need to cope with harsh conditions and complex tasks in the vehicle environment, so there are stringent qualification and verification standards and complex testing and monitoring requirements for device manufacturing. The goal of zero-defect is key to the efficient, reliable and high-volume production of automotive semiconductor devices. This review describes how Lam Research Corp. is providing solutions to achieve zero-defect performance in all areas (wafer frontside, edge/bevel, and backside) of the entire wafer. Frontside defects can be reduced by innovative honeycomb gas injector and Corvus® design in Kiyo® series etcher. Black Si defects at wafer bevel/edge can be inhibited by bottom shadow ring (BSR) on Syndion®, or bevel deposition or etching approaches on Coronus®. For arcing defects caused by tungsten (W) residual in edge area, DOMOER design in ALTUS® reduces W residual after CMP. Wafer backside deposition by VECTOR® DT not only compensates for wafer profile, reducing crack or peeling defects caused by wafer wrapping, but also acts as a barrier layer to suppress the doing effect from highly doped substrate to frontside epitaxial layers of power and CMOS image sensor (CIS) devices.