Effects of Geometry and Surface Flatness on Direct Wafer Bonding by Multiphysics Modeling

This study investigates the influence of wafer geometry, surface patterning and flatness deviations on bonding performance through finite element simulations using COMSOL Multiphysics. Key findings reveal that wafer geometry and waviness delay bonding wave propagation, while etched cavity enhance bonding speed. These results highlight the critical role of wafer geometry and surface morphology in determining bonding efficiency and provide valuable insight into optimizing wafer bonding processes in 3D IC manufacturing.

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Publication Details

Published
2025-03-24
DOI
https://doi.org/10.1109/cstic64481.2025.11017801
Primary Topic
3D IC and TSV technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

Effects of Geometry and Surface Flatness on Direct Wafer Bonding by Multiphysics Modeling

Min Xiao, Zhiheng Huang, Song Liang, Yuezhong Meng et al.
3D IC and TSV technologies
article

Effects of Geometry and Surface Flatness on Direct Wafer Bonding by Multiphysics Modeling

Min Xiao, Zhiheng Huang, Song Liang, Yuezhong Meng, Yang Liu, Hui Yan
article en

Abstract

This study investigates the influence of wafer geometry, surface patterning and flatness deviations on bonding performance through finite element simulations using COMSOL Multiphysics. Key findings reveal that wafer geometry and waviness delay bonding wave propagation, while etched cavity enhance bonding speed. These results highlight the critical role of wafer geometry and surface morphology in determining bonding efficiency and provide valuable insight into optimizing wafer bonding processes in 3D IC manufacturing.

Sun Yat-sen University (CN)
National Natural Science Foundation of China
Climate action
Openalex Percentile: Top 90%
3D IC and TSV technologies
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