The Etching of SiO<sub>2</sub>/Mo-MoN/SiO<sub>2</sub>/TiN Stacks in an Inductively Coupled Plasma System
The dry etching characteristics of Silicon oxide/Mo-MoN/Silicon oxide/TiN films to form channel hole structure were investigated using an inductively coupled plasma system. In this work, silicon oxide was etched with CF<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>/CHF<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/AR gas, TiN was etched using Cl<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/AR gas, and Mo-MoN was etched under Cl<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and SF<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</inf>/O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> gas conditions. It was found that replacing the etching gas of Mo-MoN film from Cl<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> to SF<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</inf>/O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>, a relatively smooth and vertical Silicon oxide/Mo-MoN/Silicon oxide/TiN channel hole structure is obtained.
Authors
- Hong‐Bo Sun (ORCID: https://orcid.org/0000-0003-2127-8610)
- Baodong Han
- Chao Zhao (ORCID: https://orcid.org/0009-0009-2026-2714)
- Yaqiong Li (ORCID: https://orcid.org/0000-0001-9253-5878)
- Linjie Hou
- Jirong Sun (ORCID: https://orcid.org/0000-0003-1238-8770)
- Zhonghua Jin
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11017959
- Primary Topic
- Metal and Thin Film Mechanics
- Type
- article
- Field-Weighted Citation Impact
- 0.00