Optimization of the Safe Operation Area in Step-Gate NLDMOS
The Safe Operating Area (SOA) of LDMOS devices is a critical parameter that defines the reliability and performance of power electronics systems. This paper presents the optimization strategy aimed at enhancing the SOA of the step gate NLDMOS devices by optimizing doping profiles and the field plates structure. The TCAD simulation results are presented to demonstrate that the modifications extend the SOA, enabling LDMOS devices to operate under higher voltage and current conditions.
Authors
- Xiaoyun Huang (ORCID: https://orcid.org/0000-0002-1718-0648)
- Dawei Gao (ORCID: https://orcid.org/0009-0002-7786-1506)
- Pingrui Kang
- Kai Xu (ORCID: https://orcid.org/0000-0003-3837-7922)
- Yixian Song
- Chenggang Xu
Institutions
- Zhejiang University (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11017913
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00