Contact Silicon Etch Challenge in IGBT Manufacturing
Contact is an important process in semiconductor fabrication. This paper aims at Contact Etch Process in IGBT manufacturing, which will etch both contact VIA and contact trench at one etch stage. We overcame challenges of Bottom morphology, Side-wall profile, Recess depth loading and WIW etch uniformity, those are required in IGBT contact etch process. The process was developed in NAURA NMC612C® etch system.
Authors
- Litian Xu
- Licheng Yang
- Zhongwei Jiang
Institutions
- NAURA (China) (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11017858
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00