A Novel Load-Si-Cut SOI Nanosheets Transistors with Ultrathin SiGe Cladded Si Channel Structure to Suppress Leakage and Enhance Driven Current

In this article, we propose a novel load-Si-cut silicon-on-insulator (SOI) nanosheets transistors (NSFETs) with ultrathin SiGe cladded Si channel structure, named as LSC-SOI NSFETs, improving the drive current and suppressing leakage issues in the conventional SOI (C-SOI) NSFETs. The electrical characteristics of PMOS device, inverters and ring oscillators (RO) of C-SOI and LSC-SOI NSFETs were investigated using 3D technology computer-aided design (TCAD) simulation.