Modeling of NTD Resist Shrinkage Based on Spring-Mass System

The shrinkage effect of negative tone development (NTD) process is a major factor influencing the accuracy of resist models. As a result, incorporating a resist model that accounts for this shrinkage is crucial for precise lithography simulations in NTD process. This paper presents a practical workflow of building a resist model considering shrinkage effect in NTD process. Simulation results demonstrate that the proposed model effectively captures this phenomenon, which provides a possibility for significantly improving the prediction accuracy of NTD simulations.