A Wafer-Level CMP Multi-Physics Modeling for IC Manufacturing

Chemical Mechanical Polishing (CMP) is a critical process in the manufacturing of modern integrated circuits, essential for achieving surface planarization and addressing the challenges posed by the reduction in device size. The CMP process is a complex, multi-disciplinary endeavor that involves mechanics, fluid dynamics, and chemistry, with numerous interrelated factors [1]. Given that research on CMP material removal mechanisms has lagged behind industrial practice, this paper presents a multi-physics field model, developed from the perspectives of contact mechanics and kinematics at the wafer scale. This model can predict wafer pressure distribution, material removal depth, and cumulative removal depth distribution under various process parameters. These predictions hold certain reference value and offer valuable guidance for the actual CMP process in integrated circuit manufacturing.