Hydrogen-Free IBD IGZO Thin Films With Outstanding Thermal Stability And Improved Step Coverage
Ion beam deposition technology is used to fabricate IGZO thin films with excellent thermal stability. Additionally, XPS analysis was performed on IGZO thin film to analyze the absence of hydrogen, which affects the thermal stability of the films. Furthermore, XPS depth profiling revealed homogeneous IGZO thin films deposited by the ion beam deposition. Moreover, IGZO thin films were deposited on high-aspect-ratio trenches with an aspect ratio of 6:1, exhibiting improved step coverage and conformality. The film coverage was further optimized by adjusting the angle of the ion source during the deposition process.
Authors
- Zichao Li (ORCID: https://orcid.org/0000-0003-2582-3006)
- Shiwei Zhuang (ORCID: https://orcid.org/0000-0001-8376-269X)
- Zhaoyang Chen (ORCID: https://orcid.org/0000-0002-2743-6811)
- Kaidong Xu
- Tao Zheng (ORCID: https://orcid.org/0000-0002-4029-3931)
- Hushan Cui
Institutions
- Jiangsu Normal University (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11017818
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Science and Technology