22 Al Gate Change W Gate Improve for NMOS Performance
According to 28HK learning, 22ULL+ introduces "W-MG" to improve the performance of NMOS devices, replacing AL-Gate(aluminum gate) with W-Gate (tungsten gate) can greatly reduce the resistance, while providing compressive stress on the gate, which can effectively improve the performance of NMOS devices.
Authors
- Yanpeng Cai (ORCID: https://orcid.org/0000-0001-9830-4325)
- Yu Bao
- Yu Zhang (ORCID: https://orcid.org/0000-0002-8116-532X)
- Jingxun Fang
- Zhushaojia
- Yumingfei
Institutions
- Shanghai Huali Microelectronics (China) (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11017951
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00