RF Magnetron Co-Sputtered TiN-Ga<sub>2</sub>O<sub>3</sub> Thin Films for EGFET pH Sensor Applications

In this study, a TiN-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> composite thin films were deposited using RF magnetron co-sputtering and investigated for its structural characteristics and pH-sensing capabilities. The composite material was integrated into an Extended Gate Field-Effect Transistor (EGFET) pH sensor, which was evaluated for its sensitivity, linearity, and stability. The fabricated sensor demonstrated a voltage sensitivity of 59.4 mV/pH, approaching the theoretical Nernstian limit, demonstrating high pH sensitivity and electrochemical stability. The device exhibited an exceptional linearity (R²) of 0.997, confirming its accuracy in pH detection over a broad pH range from 2 to 10. Minimal hysteresis of 3.2 mV was recorded, indicating high repeatability and stability under varying measurement conditions. The structural analysis of the TiN-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> film revealed a uniform surface morphology, which contributed to enhanced sensing performance. The presence of Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> improved the chemical stability and surface reactivity of the film, while TiN provided high conductivity and durability. The synergy between these two materials resulted in improved charge transfer efficiency, which is crucial for reliable pH sensing. The wide pH detection range makes this sensor suitable for various fields, including biomedical diagnostics, environmental monitoring, and industrial process control.

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Publication Details

Journal
IEEE Sensors Journal
Published
2025-06-03
DOI
https://doi.org/10.1109/jsen.2025.3573804
Primary Topic
Analytical Chemistry and Sensors
Type
article
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article

RF Magnetron Co-Sputtered TiN-Ga2O3 Thin Films for EGFET pH Sensor Applications

Kiran Mannem, C. Aarthi, Kunal Soni, B. Nancharaiah et al.
IEEE Sensors Journal
Analytical Chemistry and Sensors
article

RF Magnetron Co-Sputtered TiN-Ga2O3 Thin Films for EGFET pH Sensor Applications

Kiran Mannem, C. Aarthi, Kunal Soni, B. Nancharaiah, K. Venkatesan, Vinod K. Jacob, Sai Chaitanya, N. Sathish Kumar, R.P. Meenakshi Sundhari
article en

Abstract

In this study, a TiN-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> composite thin films were deposited using RF magnetron co-sputtering and investigated for its structural characteristics and pH-sensing capabilities. The composite material was integrated into an Extended Gate Field-Effect Transistor (EGFET) pH sensor, which was evaluated for its sensitivity, linearity, and stability. The fabricated sensor demonstrated a voltage sensitivity of 59.4 mV/pH, approaching the theoretical Nernstian limit, demonstrating high pH sensitivity and electrochemical stability. The device exhibited an exceptional linearity (R²) of 0.997, confirming its accuracy in pH detection over a broad pH range from 2 to 10. Minimal hysteresis of 3.2 mV was recorded, indicating high repeatability and stability under varying measurement conditions. The structural analysis of the TiN-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> film revealed a uniform surface morphology, which contributed to enhanced sensing performance. The presence of Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> improved the chemical stability and surface reactivity of the film, while TiN provided high conductivity and durability. The synergy between these two materials resulted in improved charge transfer efficiency, which is crucial for reliable pH sensing. The wide pH detection range makes this sensor suitable for various fields, including biomedical diagnostics, environmental monitoring, and industrial process control.

IEEE Sensors JournalVol. 25(14)
Rajamangala University of Technology Isan (TH), Rama University (IN), University College for Women (IN), Seva Mandir (IN), University of Engineering and Technology Peshawar (PK)
Openalex Percentile: Top 84%
Analytical Chemistry and Sensors
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