Interfacial Chemistry between Formamidinium Lead Trihalide Perovskites and Atomic-Layer-Deposited Tin Oxide

Tin oxide (SnO x ) by atomic-layer deposition (ALD), in combination with fullerene, is widely employed as an electron transport layer in p-i-n perovskite solar cells. This study investigates the direct deposition of ALD SnO x on top of formamidinium (FA)-based perovskites, as a step toward the elimination of the fullerene interlayer and its poor effect on solar cell's long-term stability. The interfacial chemistry between FA-based perovskites (FAPbI3 and FAPbBr3) and ALD SnO x was studied using soft and hard X-ray photoelectron spectroscopy (SOXPES and HAXPES) with a focus on investigating the separate roles FA and different halides play during interface formation. FAPbI3 and FAPbBr3 solar cell structures solely containing ALD SnO x resulted in s-shaped current-voltage characteristics, indicating the formation of a transport barrier at the interface. Both SOXPES and HAXPES measurements revealed the emergence of additional nitrogen states at the interface during the ALD SnO x deposition on FAPbI3 and FAPbBr3, where these states are linked to the decomposition of FA+. The FAPbI3/ALD SnO x interface also showed the presence of lead iodide (PbI2) through additional lead states other than that from FAPbI3 by using SOXPES measurements. Concerning the FAPbBr3/ALD SnO x interface, no additional lead states were observed; however, measurements instead revealed the formation of Sn-Br bonds at the interface along with the migration of bromine ions into the bulk of the ALD SnO x . Thus, FAPbI3 and FAPbBr3 undergo distinct reaction pathways upon direct deposition of ALD SnO x on top of them. We reason that the decomposition of FA+ in both perovskites and the formation of PbI2 at the FAPbI3/ALD SnO x interface and the incorporation of Br in SnO x at the FAPbBr3/ALD SnO x interface prove detrimental toward device performance. Therefore, careful interfacial engineering that can mitigate the formation of these products should be utilized to enhance the performance of perovskite solar cells.

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Publication Details

Journal
ACS Applied Energy Materials
Published
2025-06-03
DOI
https://doi.org/10.1021/acsaem.5c00968
Citations
2
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
1.46

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article

Interfacial Chemistry between Formamidinium Lead Trihalide Perovskites and Atomic-Layer-Deposited Tin Oxide

Stefania Riva, Ute B. Cappel, Håkan Rensmo, Rahul Mahavir Varma et al.
2 citations
ACS Applied Energy Materials
Perovskite Materials and Applications
1.46
article

Interfacial Chemistry between Formamidinium Lead Trihalide Perovskites and Atomic-Layer-Deposited Tin Oxide

Stefania Riva, Ute B. Cappel, Håkan Rensmo, Rahul Mahavir Varma, Erik M. J. Johansson, Tobias Törndahl, Adam Hultqvist, Natalia M. Martin, Evelyn Johannesson, Bhavya Rakheja, Karen Radetzky
article en
2 citations

Abstract

Tin oxide (SnO x ) by atomic-layer deposition (ALD), in combination with fullerene, is widely employed as an electron transport layer in p-i-n perovskite solar cells. This study investigates the direct deposition of ALD SnO x on top of formamidinium (FA)-based perovskites, as a step toward the elimination of the fullerene interlayer and its poor effect on solar cell's long-term stability. The interfacial chemistry between FA-based perovskites (FAPbI3 and FAPbBr3) and ALD SnO x was studied using soft and hard X-ray photoelectron spectroscopy (SOXPES and HAXPES) with a focus on investigating the separate roles FA and different halides play during interface formation. FAPbI3 and FAPbBr3 solar cell structures solely containing ALD SnO x resulted in s-shaped current-voltage characteristics, indicating the formation of a transport barrier at the interface. Both SOXPES and HAXPES measurements revealed the emergence of additional nitrogen states at the interface during the ALD SnO x deposition on FAPbI3 and FAPbBr3, where these states are linked to the decomposition of FA+. The FAPbI3/ALD SnO x interface also showed the presence of lead iodide (PbI2) through additional lead states other than that from FAPbI3 by using SOXPES measurements. Concerning the FAPbBr3/ALD SnO x interface, no additional lead states were observed; however, measurements instead revealed the formation of Sn-Br bonds at the interface along with the migration of bromine ions into the bulk of the ALD SnO x . Thus, FAPbI3 and FAPbBr3 undergo distinct reaction pathways upon direct deposition of ALD SnO x on top of them. We reason that the decomposition of FA+ in both perovskites and the formation of PbI2 at the FAPbI3/ALD SnO x interface and the incorporation of Br in SnO x at the FAPbBr3/ALD SnO x interface prove detrimental toward device performance. Therefore, careful interfacial engineering that can mitigate the formation of these products should be utilized to enhance the performance of perovskite solar cells.

ACS Applied Energy MaterialsVol. 8(12)
Uppsala University (SE), Sustainability Institute (ZA)
Carl Tryggers Stiftelse för Vetenskaplig Forskning, Knut och Alice Wallenbergs Stiftelse, Vetenskapsrådet, Energimyndigheten
Openalex Percentile: Top 17%
Perovskite Materials and Applications
1.46
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