Siliconizing‐Driven Layer‐by‐Layer Growth of 2D Tellurides with Controlled Crystallization

2D transition metal tellurides (TMTs) possess fascinating properties for applications in ferroelectrics and optoelectronics. Nevertheless, it is still challenging to grow high-quality 2D TMTs with the desired phase (especially high-temperature phase) because of the weak bonding between the transition metal and Te as compared to S and Se atoms. Here, a strategy of siliconizing-driven layer-by-layer growth is reported to synthesize 2D ZrTe<sub>2</sub> and ZrTe<sub>3</sub> crystals with high crystallinity and desired thickness. Both as-synthesized crystals exhibit large-area uniform phases and atomically precise layered stacking structures. 2D ZrTe<sub>2</sub> shows type-II Weyl semimetal characteristics with negative magnetoresistance, and 2D ZrTe<sub>3</sub> demonstrates the existence of charge density waves and intrinsic superconductivity. Theoretical study reveals that silicon atoms can infiltrate and isolate a single layer of zirconium atoms and allow them to be tellurized in a layer-by-layer manner. The work paves the way for the synthesis of layer-controlled 2D TMTs and lays a material foundation for their physical property research.

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Publication Details

Journal
Advanced Materials
Published
2025-06-03
DOI
https://doi.org/10.1002/adma.202501451
Citations
4
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
2.07

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article

Siliconizing‐Driven Layer‐by‐Layer Growth of 2D Tellurides with Controlled Crystallization

Feng Yang, Jinpei Zhao, Kaihui Liu, Ming‐Ju Huang et al.
4 citations
Advanced Materials
2D Materials and Applications
2.07
article

Siliconizing‐Driven Layer‐by‐Layer Growth of 2D Tellurides with Controlled Crystallization

Feng Yang, Jinpei Zhao, Kaihui Liu, Ming‐Ju Huang, Zhaolong Chen, Yunrou Wu, Can Liu, Ke Chen, Wei-Tao Liu, Feng Ding, Peng Dong Gao, Qinghe Wang, Yuanyuan Zhao, Yuan Yin
article en
4 citations

Abstract

2D transition metal tellurides (TMTs) possess fascinating properties for applications in ferroelectrics and optoelectronics. Nevertheless, it is still challenging to grow high-quality 2D TMTs with the desired phase (especially high-temperature phase) because of the weak bonding between the transition metal and Te as compared to S and Se atoms. Here, a strategy of siliconizing-driven layer-by-layer growth is reported to synthesize 2D ZrTe<sub>2</sub> and ZrTe<sub>3</sub> crystals with high crystallinity and desired thickness. Both as-synthesized crystals exhibit large-area uniform phases and atomically precise layered stacking structures. 2D ZrTe<sub>2</sub> shows type-II Weyl semimetal characteristics with negative magnetoresistance, and 2D ZrTe<sub>3</sub> demonstrates the existence of charge density waves and intrinsic superconductivity. Theoretical study reveals that silicon atoms can infiltrate and isolate a single layer of zirconium atoms and allow them to be tellurized in a layer-by-layer manner. The work paves the way for the synthesis of layer-controlled 2D TMTs and lays a material foundation for their physical property research.

Advanced MaterialsVol. 37(33)
National University of Singapore (SG), Henan University (CN), Shenzhen University (CN), Peking University (CN), Dalian University of Technology (CN), Southern University of Science and Technology (CN), Henan Academy of Sciences (CN), Peking University Shenzhen Hospital (CN), Shenzhen Technology University (CN), Renmin University of China (CN)
Innovative Research Group Project of the National Natural Science Foundation of China, National Natural Science Foundation of China, Recruitment Program of Global Experts
Openalex Percentile: Top 13%
2D Materials and Applications
2.07
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