Damage to lead iodide under XUV and x-ray laser irradiation

Lead iodide, a wide band gap semiconductor with a layered crystalline structure, is a material exhibiting interesting and useful behavior when exposed to either ionizing or non-ionizing radiation. Yet, the mechanism of damage to lead iodide by XUV and X-ray radiation remains contested, especially at extreme dose rates achieved by powerful modern sources such as capillary-discharge and free-electron lasers. A potentially complex interplay of thermal and non-thermal effects may govern the damage process. In this contribution, results obtained for PbI2 with focused beams of x-ray FELs and XUV capillary-discharge lasers are presented with attention to the role of photon energies and pulse durations, and with comparison of experimental results to computer simulations.

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Published
2025-06-03
DOI
https://doi.org/10.1117/12.3056590
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
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article

Damage to lead iodide under XUV and x-ray laser irradiation

Vojtěch Vozda, Ladislav Fekete, J. Chalupský, V. Hájková et al.
Advanced Semiconductor Detectors and Materials
article

Damage to lead iodide under XUV and x-ray laser irradiation

Vojtěch Vozda, Ladislav Fekete, J. Chalupský, V. Hájková, Michal Šmíd, M. Krupka, L. Juha, Nikita Medvedev, Luděk Vyšín, Šimon Jelínek, T. Burian, R. Dudžák, J. Krása, Jakub Bulička, Alžběta Horynová, Zuzana Valdová
article en

Abstract

Lead iodide, a wide band gap semiconductor with a layered crystalline structure, is a material exhibiting interesting and useful behavior when exposed to either ionizing or non-ionizing radiation. Yet, the mechanism of damage to lead iodide by XUV and X-ray radiation remains contested, especially at extreme dose rates achieved by powerful modern sources such as capillary-discharge and free-electron lasers. A potentially complex interplay of thermal and non-thermal effects may govern the damage process. In this contribution, results obtained for PbI2 with focused beams of x-ray FELs and XUV capillary-discharge lasers are presented with attention to the role of photon energies and pulse durations, and with comparison of experimental results to computer simulations.

Helmholtz-Zentrum Dresden-Rossendorf (DE), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ)
Openalex Percentile: Top 90%
Advanced Semiconductor Detectors and Materials
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Damage to lead iodide under XUV and x-ray laser irradiation — Vojtěch Vozda, Ladislav Fekete, et al. · (2025) | TGRS Research Map | TGRS