Investigation of functional oxides modifications induced by synchrotron irradiation

The modification of the electrical properties of functional oxides by means of synchrotron nanobeam irradiation has been investigated. Electrically conducting channels have been induced in rutile TiO2 single crystals, ascribable to a localized increase in oxygen vacancies. These conducting channels can guide the electroforming process needed for the fabrication of memristive devices. The formation of anatase nanoparticles has also been induced during electrical breakdown of irradiated samples. X-ray irradiation has also been able to modify the Schottky barrier between TiO2 and Pt electrodes. The possible thermal origin of this X-ray induced oxygen depletion in oxide materials has been investigated by means of finite element thermal simulations, and results have been compared with experimental determination of temperature increase induced during X-ray irradiation by means of XRD measurements.