High-power and high-reliability 808nm VCSEL to replace laser bar and flash lamp for Nd:YAG laser pumping
In the recent 5~10 years, high-power 808 nm VCSEL has been introduced for Nd:YAG pumping. The optical power from single 808 nm VCSEL chip has reached 100 W CW and 300 W QCW for commercial delivery, and higher optical power can be expected in the near future. Along with cost reduction, power density increase and reliability improvement, the 808 nm VCSEL is becoming an alternative pumping source for Nd:YAG laser instead of laser bar and conventional flash lamp. Compared with conventional pumping sources, VCSEL has very unique features and advantages for Nd:YAG pumping. In this paper, we will update the progress of the high-power 808 nm VCSEL development, share the lifetime and reliability performance of the high-power VCSEL both in CW and QCW mode. Several VCSEL-pumped Nd:YAG lasers will be demonstrated, including a high-energy EO Q-switched laser, a high-energy passively Q-switched laser, an end-pumped laser with MOPA system and a CW VCSEL-pumped laser.
Authors
- Chen Liang-hui
- Wei Xin (ORCID: https://orcid.org/0000-0002-1887-7535)
- Li Yang (ORCID: https://orcid.org/0000-0002-1264-4810)
- Chuanchuan Li (ORCID: https://orcid.org/0009-0004-5938-3760)
Institutions
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Published
- 2025-06-03
- DOI
- https://doi.org/10.1117/12.3058910
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00