Design a double-gate perfectly aligned impact ionization mosfet for rf and analog applications

Abstract This paper introduces a new type of bipolar impact ionization transistor called the double-gate perfectly aligned impact ionization metal oxide semiconductor field effect transistor (IMOS). Our study focuses on analyzing and optimizing the novel proposed device for better performance. For the first time in this work, the device is analyzed for different gate lengths, and gate oxide stacking, and a detailed examination of the analog and RF performance of the bipolar impact ionization field effect transistor is reported. The several performance parameters, including transconductance (g m ), output conductance (g d ), transconductance generation factor (TGF), cut-off frequency (f t ), transconductance frequency product (TFP), gain frequency product (GFP), and gain transconductance frequency product (GTFP) are analyzed in detail. Our results show that the suggested device is suitable for both analog and high-frequency applications. Furthermore, it exhibits a very low I off current and a high I on /I off ratio at low operating voltage, which makes it ideal for switching and leakage reduction applications. This study provides an overview of the potential use of IMOS devices for high-frequency future applications. SILVACO TCAD tool is used to obtain the results.