Quantum Confinement effect linked dynamical analysis of quantum Nano-materials applicable in electronic device structures

Various research papers have discussed quantum mechanical study of many homo/hetero Nano-structured (NS) materials. In this paper, we wish to propose some efficient nanostructured semiconductor materials on the basis of quantum mechanical analysis (model) of Quantum Confinement Effect (QCE) in terms of its electronic properties for electronic devices. Quantum confinement effect (QCE) in Nano–Structured (NS) materials (quantum materials) is essentially because of the changes in the energy levels (quantum) and very small length scale on the closely spaced discrete energy levels within a very narrow energy band. In other words, QCE as a reduction in allowed phase space, i.e. if we decrease material particle’s size to Nano scale(1nm=10-9m), the decrease in confining size creates the energy levels discrete(Quantized) and the band gap (Eg) energy increases and the number of discrete energy levels also increases. Due to this QCE in Nano-structured materials, significant changes occur in electronic and optical properties of materials The QC of electrons and holes in Semiconductor Nano-structures (SNS) means limiting their movement (quantized) in the Euclidian 3D space with dimension of their DE Broglie wavelength. The consequence of this confinement in phase space is the quantization of their momentum and energy. In this case, they are subjected to the principles of quantum mechanical motion rather than classical mechanical motion.