Unconventional Spin Currents in Noncollinear Antiferromagnet Mn<sub>3</sub>Ge

Unconventional spin-orbit torque (SOT) has garnered significant attention due to its potential for enabling energy-efficient and deterministic control of magnetization states. Noncollinear antiferromagnets (NCAFs) are considered ideal systems for generating such unconventional SOTs, making them highly promising for the development of next-generation spintronic devices. In this study, we report the generation of spin torques in noncollinear antiferromagnetic Mn<sub>3</sub>Ge, revealing the presence of unconventional spin polarizations (specifically, <i>x</i>- and <i>z</i>-polarized spin currents) by employing the spin-torque ferromagnetic resonance (ST-FMR) technique. All-electric SOT switching was successfully demonstrated in a Mn<sub>3</sub>Ge-based device with perpendicular magnetic anisotropy (PMA), with a critical current density of 4.2 × 10<sup>6</sup> A/cm<sup>2</sup>. Furthermore, the device exhibits memristive behavior that effectively emulates the functionality of artificial synapses in convolutional neural networks (CNNs), achieving an accuracy of 92.5% in digital recognition tasks. These results are expected to pave the way toward next-generation fast and energy-efficient memory and neuromorphic computing.

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Publication Details

Journal
Nano Letters
Published
2025-06-02
DOI
https://doi.org/10.1021/acs.nanolett.5c02185
Citations
2
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
2.49
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article

Unconventional Spin Currents in Noncollinear Antiferromagnet Mn3Ge

Xuepeng Qiu, Zheng Li, Zhe Guo, Long You et al.
2 citations
Nano Letters
Magnetic properties of thin films
2.49
article

Unconventional Spin Currents in Noncollinear Antiferromagnet Mn3Ge

Xuepeng Qiu, Zheng Li, Zhe Guo, Long You, Nian Suo Xie, Shiheng Liang, Cuimei Cao, Qingfeng Zhan, Hui Zhang, Yihan Wang, Shiwei Chen, Jinsen Chen
article en
2 citations

Abstract

Unconventional spin-orbit torque (SOT) has garnered significant attention due to its potential for enabling energy-efficient and deterministic control of magnetization states. Noncollinear antiferromagnets (NCAFs) are considered ideal systems for generating such unconventional SOTs, making them highly promising for the development of next-generation spintronic devices. In this study, we report the generation of spin torques in noncollinear antiferromagnetic Mn<sub>3</sub>Ge, revealing the presence of unconventional spin polarizations (specifically, <i>x</i>- and <i>z</i>-polarized spin currents) by employing the spin-torque ferromagnetic resonance (ST-FMR) technique. All-electric SOT switching was successfully demonstrated in a Mn<sub>3</sub>Ge-based device with perpendicular magnetic anisotropy (PMA), with a critical current density of 4.2 × 10<sup>6</sup> A/cm<sup>2</sup>. Furthermore, the device exhibits memristive behavior that effectively emulates the functionality of artificial synapses in convolutional neural networks (CNNs), achieving an accuracy of 92.5% in digital recognition tasks. These results are expected to pave the way toward next-generation fast and energy-efficient memory and neuromorphic computing.

Nano LettersVol. 25(23)
Tongji University (CN), Ministry of Education (ME), Wuhan National Laboratory for Optoelectronics (CN), Advanced Materials and Devices (United States) (US), Huazhong University of Science and Technology (CN), East China Normal University (CN), Hubei University (CN)
Affordable and clean energy
Openalex Percentile: Top 11%
Magnetic properties of thin films
2.49
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