An Embedded Current Sensing Method for Nanosecond-Pulsewidth and High-Power LIV Testing

This letter presents an Embedded Current Sensing (ECS) method to address the critical challenges in Light-Current- Voltage (LIV) testing under nanosecond-pulsewidth and highpeak- power conditions. The conventional LIV testing method is mainly limited by the accuracy of current measurement at high di/dt. The proposed ECS method leverages an inner-layer PCB trace coupled with the parasitic inductances of the power loop, and combines with correction mechanisms to convert transient current variations into measurable induced voltages. Experimental validation demonstrates the method's capability to reconstruct current waveforms with peak currents approaching 70 A and pulse widths as narrow as 5.8 ns, surpassing traditional shunt resistor method. Furthermore, the developed LIV test platform establishes a foundational framework for reliable characterization of high-power laser devices. This work bridges the validation and testing gap for next-generation optoelectronic devices operating in high-speed, high-current regimes.