Laser activation of single group-IV colour centres in diamond

Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realising precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrating a two-step fabrication method for tin vacancy (SnV<sup>-</sup>) centres that uses site-controlled ion implantation followed by local femtosecond laser annealing with in-situ spectral monitoring. The ion implantation is performed with sub-50 nm resolution and a dosage that is controlled from hundreds of ions down to single ions per site, limited by Poissonian statistics. Using this approach, we successfully demonstrate site-selective creation and modification of single SnV<sup>-</sup> centres. Our in-situ spectral monitoring opens a window onto materials tuning at the single defect level, and provides new insight into defect structures and dynamics during the annealing process. While demonstrated for SnV<sup>-</sup> centres, this versatile approach can be readily generalised to other implanted colour centres in diamond and wide-bandgap materials.

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Publication Details

Journal
Nature Communications
Published
2025-06-02
DOI
https://doi.org/10.1038/s41467-025-60373-5
Citations
13
Primary Topic
Diamond and Carbon-based Materials Research
Type
article
Field-Weighted Citation Impact
6.73

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article

Laser activation of single group-IV colour centres in diamond

Osman Balcı, Xingrui Cheng, Gareth J. F. Jones, Jason M. Smith et al.
13 citations
Nature Communications
Diamond and Carbon-based Materials Research
6.73
article

Laser activation of single group-IV colour centres in diamond

Osman Balcı, Xingrui Cheng, Gareth J. F. Jones, Jason M. Smith, Patrick S. Salter, Mete Atatüre, Cathryn P. Michaels, Maddison Coke, Andrea C. Ferrari, Dorian A. Gangloff, Richard J. Curry, Joel A. Bennett, Andreas Thurn, Mason Adshead, Guangzhao Chen
article en
13 citations

Abstract

Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realising precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrating a two-step fabrication method for tin vacancy (SnV<sup>-</sup>) centres that uses site-controlled ion implantation followed by local femtosecond laser annealing with in-situ spectral monitoring. The ion implantation is performed with sub-50 nm resolution and a dosage that is controlled from hundreds of ions down to single ions per site, limited by Poissonian statistics. Using this approach, we successfully demonstrate site-selective creation and modification of single SnV<sup>-</sup> centres. Our in-situ spectral monitoring opens a window onto materials tuning at the single defect level, and provides new insight into defect structures and dynamics during the annealing process. While demonstrated for SnV<sup>-</sup> centres, this versatile approach can be readily generalised to other implanted colour centres in diamond and wide-bandgap materials.

Nature CommunicationsVol. 16(1)
Lawrence Berkeley National Laboratory (US), University of Cambridge (GB), University of Manchester (GB), University of Oxford (GB), Science Oxford (GB)
Henry Royce Institute, Element Six, Engineering and Physical Sciences Research Council
Openalex Percentile: Top 3%
Diamond and Carbon-based Materials Research
6.73
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