In-plane ferroelectricity with high Curie temperatures in nonequilibrium SnSe <sub>1-x</sub> S <sub>x</sub> van der Waals semiconductors

While symmetry breaking in 2D ferroelectrics is obviously linked to the single-layer structure, layered (van der Waals) ferroelectrics can have a multitude of underlying mechanisms, making their identification nontrivial and often controversial. This complexity is exemplified by tin chalcogenides whose equilibrium structure, the orthorhombic α-phase with space group <i>Pnma</i>, includes an inversion center and which therefore should not be ferroelectric. Yet, recent work demonstrated polarization switching and ferroelectric domains in few-layer SnS and SnSe. Here, we use in situ electron microscopy and diffraction to determine the mechanism and characteristics of ferroelectricity across the SnSe<sub>1-x</sub>S<sub>x</sub> system. We identify two distinct phases of synthetic SnSe<sub>1-x</sub>S<sub>x</sub>: nonpolar (centrosymmetric) equilibrium (α-phase) crystals and metastable crystals adopting a distorted monoclinic structure, which are in-plane ferroelectrics with Curie temperatures of 320 to 420 °C. A surprising structural plasticity of the ferroelectric crystals during heating/cooling indicates a shallow energy landscape. This in turn suggests absence of a pronounced driving force for conversion to the α-phase that can explain the formation of the nonequilibrium crystals and their stability even after transfer to other supports. Our results highlight opportunities for the discovery of novel ferroelectrics among nonequilibrium van der Waals crystals.

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Publication Details

Journal
Proceedings of the National Academy of Sciences
Published
2025-06-02
DOI
https://doi.org/10.1073/pnas.2501509122
Citations
5
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
2.59

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article

In-plane ferroelectricity with high Curie temperatures in nonequilibrium SnSe 1-x S x van der Waals semiconductors

Eli Sutter, Peter Sutter
5 citations
Proceedings of the National Academy of Sciences
Advanced Thermoelectric Materials and Devices
2.59
article

In-plane ferroelectricity with high Curie temperatures in nonequilibrium SnSe 1-x S x van der Waals semiconductors

Eli Sutter, Peter Sutter
article en
5 citations

Abstract

While symmetry breaking in 2D ferroelectrics is obviously linked to the single-layer structure, layered (van der Waals) ferroelectrics can have a multitude of underlying mechanisms, making their identification nontrivial and often controversial. This complexity is exemplified by tin chalcogenides whose equilibrium structure, the orthorhombic α-phase with space group <i>Pnma</i>, includes an inversion center and which therefore should not be ferroelectric. Yet, recent work demonstrated polarization switching and ferroelectric domains in few-layer SnS and SnSe. Here, we use in situ electron microscopy and diffraction to determine the mechanism and characteristics of ferroelectricity across the SnSe<sub>1-x</sub>S<sub>x</sub> system. We identify two distinct phases of synthetic SnSe<sub>1-x</sub>S<sub>x</sub>: nonpolar (centrosymmetric) equilibrium (α-phase) crystals and metastable crystals adopting a distorted monoclinic structure, which are in-plane ferroelectrics with Curie temperatures of 320 to 420 °C. A surprising structural plasticity of the ferroelectric crystals during heating/cooling indicates a shallow energy landscape. This in turn suggests absence of a pronounced driving force for conversion to the α-phase that can explain the formation of the nonequilibrium crystals and their stability even after transfer to other supports. Our results highlight opportunities for the discovery of novel ferroelectrics among nonequilibrium van der Waals crystals.

Proceedings of the National Academy of SciencesVol. 122(23)
University of Nebraska–Lincoln (US)
Army Research Office
Openalex Percentile: Top 10%
Advanced Thermoelectric Materials and Devices
2.59
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In-plane ferroelectricity with high Curie temperatures in nonequilibrium SnSe <sub>1-x</sub> S <sub>x</sub> van der Waals semiconductors — Eli Sutter, Peter Sutter · Proceedings of the National Academy of Sciences (2025) | TGRS Research Map | TGRS