2D material fab-scale transfer of 200 mm wafer using molecular direct bonding

Abstract In this study, we demonstrate a low-temperature transfer method for MoS 2 onto a 200 mm silicon wafer while maintaining the integrity of the 2D layer. The approach involves the direct bonding of MoS 2 , grown on SiO 2 , to a silicon substrate. The separation of the bonded wafers is achieved through mechanical debonding, using a blade inserted at a controlled speed. By carefully optimizing the debonding environment and blade velocity, we were able to improve the transfer yield to over 93%. Our findings indicate that both the transfer rate and material quality are enhanced when the blade insertion velocity is slow and the process conducted in water. Raman spectroscopy and x-ray photoelectron spectroscopy analyses confirmed that the chemical structure of MoS 2 is preserved. Additionally, atomic force microscopy and scanning electron microscopy analyses revealed no mechanical defects, such as cracks or wrinkles, and showed the absence of residues. Experimental conditions were conducted on several wafers to prove the excellent reproducibility of the process.