Revisiting thermoelectric transport properties through a band nonparabolicity factor

Thermoelectric materials are advanced functional semiconductors for the forthcoming era of energy conversion. The development in this field critically depends on the understanding of their band structures. However, many analyses rely on the parabolic band model that oversimplifies the realistic electron behavior. Such simplification leads to significant deviations in the predicted behavior of electrical transport properties due to the non-local characteristics of the Seebeck coefficient and the Lorenz number. This study introduces a nonparabolicity factor <i>ξ</i>, which quantitatively measures the deviations from parabolic dispersion in semiconductor band structures and can also directly predict the thermoelectric performance change induced by the band nonparabolicity. Notably, our results reveal that the influence of band nonparabolicity is significant when estimating the Lorenz number. We have formulated a universal <i>ξ</i> modified solution for the Lorenz number, which can effectively correct the non-physical lattice thermal conductivity derived from the typical parabolic band model in various representative thermoelectric semiconductors, establishing a basis for further insights into the underlying mechanisms of electrical and thermal transport.

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Publication Details

Journal
National Science Review
Published
2025-05-30
DOI
https://doi.org/10.1093/nsr/nwaf216
Citations
4
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
2.07

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article

Revisiting thermoelectric transport properties through a band nonparabolicity factor

Xin Chen, Jiehe Sui, Jianbo Zhu, Zihang Liu et al.
4 citations
National Science Review
Advanced Thermoelectric Materials and Devices
2.07
article

Revisiting thermoelectric transport properties through a band nonparabolicity factor

Xin Chen, Jiehe Sui, Jianbo Zhu, Zihang Liu, Ming Liu, Pengfei Liu, Jingyu Li, Yongsheng Zhang, Fengkai Guo, Xingyan Dong
article en
4 citations

Abstract

Thermoelectric materials are advanced functional semiconductors for the forthcoming era of energy conversion. The development in this field critically depends on the understanding of their band structures. However, many analyses rely on the parabolic band model that oversimplifies the realistic electron behavior. Such simplification leads to significant deviations in the predicted behavior of electrical transport properties due to the non-local characteristics of the Seebeck coefficient and the Lorenz number. This study introduces a nonparabolicity factor <i>ξ</i>, which quantitatively measures the deviations from parabolic dispersion in semiconductor band structures and can also directly predict the thermoelectric performance change induced by the band nonparabolicity. Notably, our results reveal that the influence of band nonparabolicity is significant when estimating the Lorenz number. We have formulated a universal <i>ξ</i> modified solution for the Lorenz number, which can effectively correct the non-physical lattice thermal conductivity derived from the typical parabolic band model in various representative thermoelectric semiconductors, establishing a basis for further insights into the underlying mechanisms of electrical and thermal transport.

National Science ReviewVol. 12(8)
Chinese Academy of Sciences (CN), Qufu Normal University (CN), Harbin Institute of Technology (CN), China Spallation Neutron Source (CN), Institute of High Energy Physics (AT), Institute of High Energy Physics (CN), Harbin Welding Institute (CN), Spallation Neutron Source
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 13%
Advanced Thermoelectric Materials and Devices
2.07
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