Design and Application of High-Efficiency Gallium Nitride (GaN)-Based Power Electronic Devices

As silicon technology reaches its physical limits, gallium nitride (GaN) electronic devices are emerging as a disruptive solution in power electronics. GaN devices, with their superior breakdown voltage, exceptional thermal stability, and outstanding high-frequency performance, offer considerable benefits over traditional silicon-based devices. And these properties increase power density, switching speed, and greatly enhance energy efficiency, making GaN a key technology driving the development of next-generation power electronic systems. This paper reviews the latest advancements in GaN epitaxial growth, device design, and reliability optimization, while delving into key challenges such as thermal management and dynamic resistance degradation under high-power conditions. The results highlight the critical role of heterojunction engineering and gate structure innovations in suppressing interface defects and enhancing device efficiency. As an emerging technology, GaN power devices, which hold considerable commercial potential, are set to transform power density, switching efficiency, and operational stability in next-generation electronic applications.