Study on the Interference of 532 nm Laser on Area Array Silicon-Based CCD

本文探究了532 nm波长激光对面阵式硅基电荷耦合器件(CCD)的电磁干扰效应，通过构建激光辐照CCD器件的多物理场仿真模型与实验验证平台，重点揭示了CCD饱和像元数量与入射激光功率密度之间的非线性响应机制。基于半导体器件物理模型，仿真计算获得了不同辐照功率下电荷迁移层的载流子分布特性。实验系统定量获取了CCD输出图像的灰度数据，通过对比分析实验数据与仿真结果，发现两者在饱和像元增长趋势及功率阈值方面呈现高度吻合，验证了所建模型在预测激光致盲效应方面的有效性，为光电对抗系统中CCD器件的激光防护设计提供了理论依据。This study investigates the electromagnetic interference effects of 532 nm wavelength laser on area-array silicon-based Charge-Coupled Device (CCD). By constructing a multi-physics simulation model for laser-irradiated CCD devices and developing an experimental validation platform, the nonlinear response mechanism between the number of saturated pixels in CCD and the incident laser power density was systematically revealed. Based on semiconductor device physics models, the carrier distribution characteristics in the charge transfer layer under varying irradiation power levels were numerically simulated. The experimental system quantitatively acquired grayscale data from CCD output images. Through comparative analysis of experimental data and simulation results, a high degree of consistency was observed in both the growth trend of saturated pixels and the power threshold parameters, which validated the effectiveness of the proposed model in predicting laser-induced blinding effects. These findings provide a theoretical foundation for the laser protection design of CCD devices in electro-optical countermeasure systems.