Monolayer Control of Spin-Charge Conversion in van der Waals Heterostructures

The diversity of 2D materials and their van der Waals (vdW) stacking presents fertile ground for engineering novel multifunctional materials and quantum states of matter. This permits unique opportunities to tailor the electronic properties of vdW heterostructures by the insertion of only a single 2D material layer. However, such vdW materials engineering at the atomic scale has yet to be investigated for spin-charge interconversion phenomena. Here, we report on the control of these effects at the monolayer level, where a drastic increase in intensity and change in sign of THz spintronic emission are demonstrated by inserting a single layer of MoSe_{2} between PtSe_{2} and graphene in a fully epitaxial, large area stacked structure. By using a combination of spin and angle resolved photoemission and density functional theory to reveal the electronic and spin structures, we illustrate two different mechanisms relying on charge transfer and electronic hybridization for the formation of Rashba states, which are responsible for spin-charge conversion and hence the THz spintronic emission. These findings open new pathways to design, at the atomic scale, efficient THz spintronic emitters made of 2D materials and other spintronic devices based on spin-charge interconversion phenomena.

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Publication Details

Journal
Physical Review Letters
Published
2025-05-30
DOI
https://doi.org/10.1103/l41n-qxpd
Citations
2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.04

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article

Monolayer Control of Spin-Charge Conversion in van der Waals Heterostructures

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Monolayer Control of Spin-Charge Conversion in van der Waals Heterostructures

Abdelkarim Ouerghi, A. Marty, Matthieu Jamet, Fatima Ibrahim, Adrien Wright, Isabelle Gomes de Moraes, Rahul Sharma, S. Massabeau, Céline Vergnaud, Henri Jaffres, Anupam Jana, Jun Fujii, Manuel Bibès, Khasan Abdukayumov, Indrani Kar, Federico Mazzola, Frédéric Bonell, Vincent Polewczyk, I. Vobornik, Mairbek Chshiev, Hanako Okuno, C. Jego, Martin Mičica, O. Renault, Libor Vojáček, Luana De Lucca de Costa, Jing Li, Jean‐Marie George, Oliver Paull, S. Dhillon
article en
2 citations

Abstract

The diversity of 2D materials and their van der Waals (vdW) stacking presents fertile ground for engineering novel multifunctional materials and quantum states of matter. This permits unique opportunities to tailor the electronic properties of vdW heterostructures by the insertion of only a single 2D material layer. However, such vdW materials engineering at the atomic scale has yet to be investigated for spin-charge interconversion phenomena. Here, we report on the control of these effects at the monolayer level, where a drastic increase in intensity and change in sign of THz spintronic emission are demonstrated by inserting a single layer of MoSe_{2} between PtSe_{2} and graphene in a fully epitaxial, large area stacked structure. By using a combination of spin and angle resolved photoemission and density functional theory to reveal the electronic and spin structures, we illustrate two different mechanisms relying on charge transfer and electronic hybridization for the formation of Rashba states, which are responsible for spin-charge conversion and hence the THz spintronic emission. These findings open new pathways to design, at the atomic scale, efficient THz spintronic emitters made of 2D materials and other spintronic devices based on spin-charge interconversion phenomena.

Physical Review LettersVol. 135(1)
Ca' Foscari University of Venice (IT), Institut Universitaire de France (FR), Université Paris-Saclay (FR), AREA Science Park (IT), Centre de Nanosciences et de Nanotechnologies (FR), École Normale Supérieure (BI), Spintronique et Technologie des Composants (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), Institut des langues et cultures d'Europe, Amérique, Afrique, Asie et Australie (FR), Université Grenoble Alpes (FR)
Equipex, Graphene Flagship, European Commission, Agence Nationale de la Recherche, Grand Équipement National De Calcul Intensif, Horizon 2020 Framework Programme, European Research Council
Affordable and clean energy
Openalex Percentile: Top 25%
2D Materials and Applications
1.04
DOIOpen Access PDFOpenAlex
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