Characterization and Optimization of Si0.75Ge0.25-FinFETs Based on Operating Temperature and Gate Length

Journal of Nano- and Electronic Physics. Scientific journal. ISSN: 2077-6772. Journal abbreviation: J. Nano- Electron. Phys. No page charges. All articles are freely available on-line. Issued 4 times per year. Publisher: Sumy State University. (Sumy, Ukraine)

Authors

Yasir Hashim (ORCID: https://orcid.org/0000-0003-1989-0229)
Yousif Atalla
Mohamad Hafiz Mamat (ORCID: https://orcid.org/0000-0002-6640-2366)

Publication Details

Journal: Journal of Nano- and Electronic Physics
Published: 2025-01-01
DOI: https://doi.org/10.21272/jnep.17(2).02011
Primary Topic: Advancements in Semiconductor Devices and Circuit Design
Type: article
Field-Weighted Citation Impact: 0.00

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article

Characterization and Optimization of Si0.75Ge0.25-FinFETs Based on Operating Temperature and Gate Length

Yasir Hashim, Yousif Atalla, Mohamad Hafiz Mamat

Jan 1, 2025

4 links

Journal of Nano- and Electronic Physics

Advancements in Semiconductor Devices and Circuit Design

article

Characterization and Optimization of Si0.75Ge0.25-FinFETs Based on Operating Temperature and Gate Length

Yasir Hashim, Yousif Atalla, Mohamad Hafiz Mamat

January 1, 2025article en

Abstract

Journal of Nano- and Electronic PhysicsVol. 17(2)

Affordable and clean energy

Openalex Percentile: Top 90%

Advancements in Semiconductor Devices and Circuit Design

DOI Open Access PDF OpenAlex

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Characterization and Optimization of Si0.75Ge0.25-FinFETs Based on Operating Temperature and Gate Length — Yasir Hashim, Yousif Atalla, et al. · Journal of Nano- and Electronic Physics (2025) | TGRS Research Map | TGRS