An Improved Low Power Sense Amplifier Using Level Restoration Technique and Performance Comparison with Existing Sense Amplifier Topologies at 32 nm Technology

Journal of Nano- and Electronic Physics. Scientific journal. ISSN: 2077-6772. Journal abbreviation: J. Nano- Electron. Phys. No page charges. All articles are freely available on-line. Issued 4 times per year. Publisher: Sumy State University. (Sumy, Ukraine)

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Publication Details

Journal
Journal of Nano- and Electronic Physics
Published
2025-01-01
DOI
https://doi.org/10.21272/jnep.17(2).02007
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
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article
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article

An Improved Low Power Sense Amplifier Using Level Restoration Technique and Performance Comparison with Existing Sense Amplifier Topologies at 32 nm Technology

Hashmat Usmani, Divya Divya, Renu Rani, Neha Goel
Journal of Nano- and Electronic Physics
Advancements in Semiconductor Devices and Circuit Design
article

An Improved Low Power Sense Amplifier Using Level Restoration Technique and Performance Comparison with Existing Sense Amplifier Topologies at 32 nm Technology

Hashmat Usmani, Divya Divya, Renu Rani, Neha Goel
article en

Abstract

Journal of Nano- and Electronic Physics. Scientific journal. ISSN: 2077-6772. Journal abbreviation: J. Nano- Electron. Phys. No page charges. All articles are freely available on-line. Issued 4 times per year. Publisher: Sumy State University. (Sumy, Ukraine)

Journal of Nano- and Electronic PhysicsVol. 17(2)
Sustainable cities and communities
Openalex Percentile: Top 90%
Advancements in Semiconductor Devices and Circuit Design
DOIOpen Access PDFOpenAlex
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An Improved Low Power Sense Amplifier Using Level Restoration Technique and Performance Comparison with Existing Sense Amplifier Topologies at 32 nm Technology — Hashmat Usmani, Divya Divya, et al. · Journal of Nano- and Electronic Physics (2025) | TGRS Research Map | TGRS