Engineered semiconductor-dielectric interfaces in polymer ferroelectric transistors
A comparison of atomic layer deposited Al 2 O 3 on PVDF-based copolymers in polymer transistors shows a significant improvement in the subthreshold swing for PVDF-HFP devices compared with PVDF-TrFE. Al 2 O 3 passivates the interfacial traps.
Authors
- Andrew C. Meng (ORCID: https://orcid.org/0000-0002-3060-8928)
- S. Guha (ORCID: https://orcid.org/0000-0002-6269-2298)
- Dilan M. Gamachchi (ORCID: https://orcid.org/0000-0003-1517-839X)
- Arash Ghobadi (ORCID: https://orcid.org/0000-0002-0501-6066)
- Joseph Mathai
- Indeewari M. Karunarathne (ORCID: https://orcid.org/0009-0008-7105-0036)
- Shubhra Gangopadhyay
- Thomas Kallaos
Institutions
- University of Missouri (US)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01378j
- Citations
- 1
- Primary Topic
- Analytical Chemistry and Sensors
- Type
- article
- Field-Weighted Citation Impact
- 0.74
Funders
- National Science Foundation
- Division of Electrical, Communications and Cyber Systems