An Accurate Model of Coupled MWCNT Based TSVs to Reduce the Crosstalk Issues

The through silicon vias (TSVs) designed with multi-walled carbon nanotube (MWCNT) and polymers is proposed in this work for performance enhancement of 3D integrated circuit. The MWCNTs are positioned as the metal layer and the polymers are positioned as the insulating liners in TSVs. These TSV configurations are modeled electrical in HSPICE tool to analyze the various performance parameters. According to the performance investigations, polymers (like polyimide, PPC, and BCB) outperform SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> liners in noise, power, PDP and EDP, respectively. Additionally, the performances are also examined by altering the TSV heights. The average improvement of MWCNT based TSVs with BCB compared to SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> liners are 25.74%,11.9%,21.9%, and 32%, in noise, power, PDP, and EDP, respectively.