A Broadband Millimeter-Wave 5G Front-End Module IC in 22nm CMOS FD-SOI

In this paper, we present a broadband millimeter-wave (mm-Wave) 5G front-end module (FEM) integrated circuit (IC) designed in an advanced 22 nm CMOS FD-SOI (Fully-Depleted Silicon-On-Insulator) process offered by GlobalFoundries (GF). The broadband mm-Wave 5G RF (radio-frequency) FEM IC includes a broadband power amplifiers (PA), a low-noise-amplifier (LNA), and a SPDT (single-pole double-throw) switch. The performance of the FEM IC is simulated with post-layout parasitic extraction (PEX) and compared vs. available measured data. This work suggests an all-silicon RF FEM IC may be attractive for some commercial mm-Wave 5G and 6G applications.