A 71–77 GHz Down-Conversion Mixer in 90-nm CMOS Process

This paper presents a down-conversion mixer for E-band applications in the 90-nm CMOS process. The proposed mixer adopts cross-coupled transistors current bleeding technique with an inductor for resonating the additional parasitic capacitance. Combined with a pre-amplifier, the proposed mixer achieves a peak gain of 22.3 dB at 75 GHz. The mixer's lowest noise figure also appears at 75 GHz with a value of 11.7 dB. The power consumption is 29.9 mW under a 1.2-V supply and the chip area is 0.714 mm × 0.567 mm.