InP DHBT 200-GSa/s Large Output Swing AMUX-Driver Using Transimpedance Stage Loading for 200-Gbaud-and-Beyond Optical Transceivers

In this article, we report on the design and characterization of InP-DHBT analog multiplexer (AMUX)-driver integrated circuits (ICs) for next generation <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\geq 200$</tex-math> </inline-formula> Gbaud (GBd) metro/long-haul optical transceivers. We show that the transimpedance stage (TIS) loading of the AMUX selecting cell provides superior gain<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times $</tex-math> </inline-formula>bandwidth and linearity performances with respect to the commonly used resistive and cascode loads. Moreover, the driving clock amplitude and tail current of the selecting core are shown to be key parameters for the AMUX-driver design. The AMUX-drivers with TIS loading are fabricated in the III-V Lab’s InP DHBT process, showing up to 200-GSa/s sampling rate, without any support of DSP. At 100 GSa/s and 2.4 Vppd of PAM-4 output swing, the highest AMUX FoM is obtained. To the best of the authors’ knowledge, these are the highest performances reported to date for an AMUX(-driver). Additionally, an AMUX-driver chip is assembled with a TFLN modulator, demonstrating an E/O bandwidth in excess of 85 GHz, while supporting the generation of 100-GBd PAM-4 optical signals, without DSP or active cooling.

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Publication Details

Journal
IEEE Transactions on Microwave Theory and Techniques
Published
2025-05-30
DOI
https://doi.org/10.1109/tmtt.2025.3569647
Citations
2
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
1.46

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article

InP DHBT 200-GSa/s Large Output Swing AMUX-Driver Using Transimpedance Stage Loading for 200-Gbaud-and-Beyond Optical Transceivers

Qian Hu, Mengyue Xu, Virginie Nodjiadjim, A. Konczykowska et al.
2 citations
IEEE Transactions on Microwave Theory and Techniques
Semiconductor Lasers and Optical Devices
1.46
article

InP DHBT 200-GSa/s Large Output Swing AMUX-Driver Using Transimpedance Stage Loading for 200-Gbaud-and-Beyond Optical Transceivers

Qian Hu, Mengyue Xu, Virginie Nodjiadjim, A. Konczykowska, Ziyang Hu, Colin Mismer, Jérémie Renaudier, Xinlun Cai, F. Blache, C. Mukherjee, F. Jorge, Bertrand Ardouin, Romain Hersent, Nil Davy, H. Mardoyan, Marina Deng, Cristell Maneux, M. Goix, Lifeng Chen, Yuntao Zhu, M. Riet
article en
2 citations

Abstract

In this article, we report on the design and characterization of InP-DHBT analog multiplexer (AMUX)-driver integrated circuits (ICs) for next generation <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\geq 200$</tex-math> </inline-formula> Gbaud (GBd) metro/long-haul optical transceivers. We show that the transimpedance stage (TIS) loading of the AMUX selecting cell provides superior gain<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times $</tex-math> </inline-formula>bandwidth and linearity performances with respect to the commonly used resistive and cascode loads. Moreover, the driving clock amplitude and tail current of the selecting core are shown to be key parameters for the AMUX-driver design. The AMUX-drivers with TIS loading are fabricated in the III-V Lab’s InP DHBT process, showing up to 200-GSa/s sampling rate, without any support of DSP. At 100 GSa/s and 2.4 Vppd of PAM-4 output swing, the highest AMUX FoM is obtained. To the best of the authors’ knowledge, these are the highest performances reported to date for an AMUX(-driver). Additionally, an AMUX-driver chip is assembled with a TFLN modulator, demonstrating an E/O bandwidth in excess of 85 GHz, while supporting the generation of 100-GBd PAM-4 optical signals, without DSP or active cooling.

IEEE Transactions on Microwave Theory and TechniquesVol. 73(10)
Centre National de la Recherche Scientifique (FR), Université de Bordeaux (FR), Sun Yat-sen University (CN), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Nokia (France) (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), III V Lab (FR), Laboratoire de l'Intégration du Matériau au Système (FR), Institut Polytechnique de Bordeaux (FR), Nokia (United States) (US)
European Commission, Horizon 2020 Framework Programme
Affordable and clean energy
Openalex Percentile: Top 17%
Semiconductor Lasers and Optical Devices
1.46
DOIOpen Access PDFOpenAlex
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