Evaluating the Impact of High-k Dielectrics in Enhancing the Gain and Switching Characteristics of GaN FET

In this paper, we evaluated the impact of the following high-k <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{dielectrics}-\text{SiO}_{2}, \text{HfO}_{2}, \text{ZrO}_{2}$</tex>, HfSiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>, and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{ZrSiO}_{4}$</tex> -on the basis of gain and switching characteristics of the GaN FET(Gallium Nitride Field-Effect Transistor). Here we used COMSOL Multiphysics software to design GaN FET and simulated the results and the transfer and output characteristic graphs was obtained. In this we will calculate following key per-formance metrics, including transconductance, threshold voltage, relative subthreshold slope, frequency response and gain from those graphs. The main objective of this paper is to compare the all parameters of dielectric materials and to select best dielectric material to get high performance exhibiting device. The materials having high dielectric constant will reflect the device in such a way that the efficiency in terms of performance and switching capability will increase. After comparison of all five dielctrics we conclude that how different dielectrics enhance gate control, reduce leakage currents, and improve switching speeds, demonstrating their potential to advance MOSFET designs for high-frequency and low power applications.