Performance analysis of uniformly doped DG-JF-TFET with various NBG and WBG materials for mixed signal applications

Abstract In this research, the performance of homogeneous narrow-bandgap (NBG) and wide-bandgap (WBG) materials in dual-gate junction-free tunnel field-effect transistors (DG-JF-TFETs) is evaluated, highlighting their potential for advanced mixed-signal applications. For the first time, the performance analysis of NBG materials, including Germanium (Ge), Silicon (Si), Gallium Antimonide (GaSb) and Aluminum Gallium Arsenide (AlGaAs), is presented alongside WBG materials such as Gallium Nitride (GaN) and Aluminum Nitride (AlN). Both categories exhibit a consistent off-state current ( I off = 9.6 fA). Among NBG materials, AlGaAs shows exceptional performance compared to conventional TFET structures, achieving a maximum cutoff frequency ( f t ) of 728 GHz, a transconductance ( g m ) of 8.62 × 10 −3 S μ m −1 , and a maximum oscillation frequency ( f max ) of 801 GHz. In contrast, WBG materials exhibit slightly lower performance, with f max = 692 GHz and f t = 591 GHz.NBG materials outperform WBG materials by delivering a 10.7% higher on/off current ratio <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mfenced close=")" open="("> <mml:mrow> <mml:mfrac> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi>I</mml:mi> </mml:mrow> <mml:mrow> <mml:mtext>on</mml:mtext> <mml:mspace width="0.1em"/> </mml:mrow> </mml:msub> </mml:mrow> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi>I</mml:mi> </mml:mrow> <mml:mrow> <mml:mspace width="0.1em"/> <mml:mtext>off</mml:mtext> </mml:mrow> </mml:msub> </mml:mrow> </mml:mfrac> </mml:mrow> </mml:mfenced> </mml:math> , a 35% increase in transconductance, a 35.52% improvement in f max , and a 13.23% higher f t . This analysis identifies NBG materials, particularly AlGaAs, as superior performers for DG-JF-TFET structures, making the proposed homogeneous design highly promising for next generation mixed-signal applications.