Design of a Highly Linear Low Noise Amplifier With Inverter‐Connected Capacitive Cross‐Coupled Topology for Post‐5G Wireless Systems

ABSTRACT This paper presents a wideband low noise amplifier (WBLNA) for the 2–11 GHz band with high linearity and low power consumption. The proposed WBLNA is designed based on the inverter‐connected capacitive cross‐coupled topology in 0.13 µm CMOS technology. The presented circuit utilises the well‐combination of recently published techniques, including inductive source degeneration, inductively series‐peaking common source stage, capacitive cross‐coupled common gate topology, complementary push‐pull and current‐reuse architectures and noise cancellation methods. An analytical solution is presented for the proposed structure, where the analytical results are compared with the pre ‐and post‐layout simulation results. The post‐layout simulation results demonstrate a high and flat S 21 of 19.6 ± 0.5 dB over the entire frequency band. In addition, the proposed structure meets the minimum noise figure of 2 dB at 9 GHz while consuming 6.01 mW from a 1.2 V power supply. The process voltage temperature simulations are also reported in this work, in which correct operation was observed for all scenarios. The proposed WBLNA can be used to integrate different wireless technologies into post‐5G wireless systems.