Inverted resistive switching mechanism in polycrystalline PBTTT-C14 polymer devices based on contact geometry and molecular packing for neuromorphic memory
Poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2- b ]thiophene] (PBTTT-C14) based two-terminal devices with hexagonal bottom contact geometry show resistive switching memory from low resistive state (LRS) to high resistive state (HRS).
Authors
- Ramesh Singh Bisht (ORCID: https://orcid.org/0009-0008-3961-3089)
- Pramod Kumar (ORCID: https://orcid.org/0000-0001-6988-2660)
Institutions
- Indian Institute of Technology Bombay (IN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01372k
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00