Tailoring Ga <sub>2</sub> O <sub>3</sub> epitaxial films on sapphire: impact of gallium ligand precursors and growth temperature using mist-CVD
The selection of gallium precursors and growth temperatures affects the crystallinity and phase composition of Ga 2 O 3 epitaxial films using the mist-CVD. The gallium halide precursor shows lower carbon impurities and forms high-quality Ga 2 O 3 films.
Authors
- You Seung Rim (ORCID: https://orcid.org/0000-0002-4281-8818)
- Chowdam Venkata Prasad
- Madani Labed (ORCID: https://orcid.org/0000-0003-2608-4452)
- Ho Jung Jeon (ORCID: https://orcid.org/0009-0001-8473-0814)
- Jang Hyeok Park
Institutions
- Sejong University (KR)
- Seoul Semiconductor (South Korea) (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01235j
- Citations
- 1
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.43