Valley topological phase transitions under the combined effects of electronic correlation and strain in the H-TiSeBr monolayer
By reducing the electronic correlation, the H-TiSeBr monolayer can sustain the valley-polarized quantum anomalous Hall state within a broader strain range.
Authors
- Yonghu Xu
- X. L. Chen (ORCID: https://orcid.org/0009-0001-9195-7224)
- Zhen Gao (ORCID: https://orcid.org/0009-0002-6027-1470)
- Kai Xiong (ORCID: https://orcid.org/0000-0001-9623-1863)
- Minghui Qin (ORCID: https://orcid.org/0000-0002-8306-125X)
- Yao He (ORCID: https://orcid.org/0000-0003-0586-0600)
- Pei Zhang (ORCID: https://orcid.org/0000-0002-9251-4724)
Institutions
- Hunan University of Science and Technology (CN)
- Yunnan University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01288k
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Education Department of Hunan Province
- National Natural Science Foundation of China
- Yunnan Provincial Department of Education