Fabrication of Air Cavity Structures Using DRIE for Acoustic Signal Confinement in FBAR Devices

Acoustic energy penetrates into the Si substrate at cavity boundaries. Due to this, the air cavity-based bulk acoustic resonators experience higher harmonic mode, parasitic resonance, and spurious mode. To overcome these effects and enhance the performance parameters, a backside air cavity is fabricated using the deep reactive ion etching (DRIE) method. The DRIE method helps to achieve the optimized active area of the resonator. SiO₂ film on a silicon substrate as the support layer and ZnO as the piezoelectric (PZE) film are used for the resonator. The crystal growth and surface morphology of ZnO film were investigated with X-ray diffraction, scanning electron microscopy, and atomic force microscopy. FBAR is modeled in a 1-D modified Butterworth-Van Dyke (mBVD) equivalent circuit. As RF measurement results, we successfully demonstrated a FBAR with optimized active area of 320 × 320 μm², center frequency of 1.261 GHz, having a quality factor of 583.8. Overall, this suppression of higher harmonic mode shows the great potential for improving the selectivity of the sensor and also in RF filter design applications. This integration of DRIE-based cavity formation with ZnO-based FBAR architecture not only enables compact design but also effectively suppresses spurious and higher-order modes, which demonstrates a performance-enhancing fabrication strategy not fully explored in the current literature.