Enhancing the Performance of Micro LEDs via Lightweight Atomic Charge‐Matching Passivation

Abstract Gallium nitride (GaN)‐based micro light‐emitting diodes (Micro LEDs) are essential for next‐generation display technologies owing to their high resolution, low power consumption, and long lifespan. However, as device dimensions decrease, sidewall damage caused by dry etching and other fabrication processes becomes a significant factor that reduces device efficiency. This work investigates the dynamics of the passivation process and the evolution of sidewall defects during the fabrication of Micro LEDs by employing lightweight atomic charge‐matching passivation techniques. By combining theoretical calculations and experimental treatments, it is demonstrated that dangling bonds on the GaN sidewalls act as non‐radiative recombination centers. Hydrogen (H) passivation is shown to effectively neutralize surface states, eliminating non‐radiative recombination and improving carrier confinement. Micro LED devices ranging from 5 to 50 µm demonstrate that H plasma treatment, following wet etching, significantly enhances photoluminescence intensity and wall Plug Efficiency, and reduces leakage currents. The size‐dependent performance enhancement is attributed to the effective passivation of surface defects and the suppression of impurity states, providing a reliable method for improving the performance of GaN‐based Micro LEDs.