Single-Button-Enabled Split-Modulation Transistor for Bidirectional Response in Dynamic Detection

The bidirectional response of a machine vision system is pivotal for the efficient processing of complex motion scenes. However, achieving a reconfigurable bidirectional modulation still suffers from complex configurations with cumbersome operation and high power consumption. Here, we propose a single-button-enabled bidirectional transistor based on WSe2 homojunction with a split-modulation layer of ferroelectric CIPS and charge trapping, exhibiting user-friendly operation and low power consumption for motion signal detection. The single-button gate could effectively reconfigure the rectification ratio and photovoltaic current ranging from 10–7 to 104 and −526 pA (0.33 V) to 926 pA (−0.41 V), respectively, incorporating the nonvolatile and bidirectional modulation. Furthermore, energy-saving and highly sensitive motion detection is implemented at zero bias, and the recognition accuracy of characteristic information is up to 98.5%. This work introduces a straightforward and efficient neuromorphic device for moving object detection.

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Publication Details

Journal
ACS Photonics
Published
2025-05-29
DOI
https://doi.org/10.1021/acsphotonics.5c00355
Citations
1
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.73

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Single-Button-Enabled Split-Modulation Transistor for Bidirectional Response in Dynamic Detection

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ACS Photonics
Advanced Memory and Neural Computing
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article

Single-Button-Enabled Split-Modulation Transistor for Bidirectional Response in Dynamic Detection

Congxin Xia, Suicai Zhang, Xiaohui Song, Yurong Jiang, Xueping Li, Leiming Yu, Hongzhi Li
article en
1 citations

Abstract

The bidirectional response of a machine vision system is pivotal for the efficient processing of complex motion scenes. However, achieving a reconfigurable bidirectional modulation still suffers from complex configurations with cumbersome operation and high power consumption. Here, we propose a single-button-enabled bidirectional transistor based on WSe2 homojunction with a split-modulation layer of ferroelectric CIPS and charge trapping, exhibiting user-friendly operation and low power consumption for motion signal detection. The single-button gate could effectively reconfigure the rectification ratio and photovoltaic current ranging from 10–7 to 104 and −526 pA (0.33 V) to 926 pA (−0.41 V), respectively, incorporating the nonvolatile and bidirectional modulation. Furthermore, energy-saving and highly sensitive motion detection is implemented at zero bias, and the recognition accuracy of characteristic information is up to 98.5%. This work introduces a straightforward and efficient neuromorphic device for moving object detection.

ACS PhotonicsVol. 12(6)
Henan Normal University (CN)
National Natural Science Foundation of China, Natural Science Foundation of Henan Province, Henan Province Foundation for University Key Teacher, Henan Postdoctoral Science Foundation, Henan Provincial Science and Technology Research Project
Affordable and clean energy
Openalex Percentile: Top 28%
Advanced Memory and Neural Computing
0.73
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