Active Gate Driver of SiC MOSFETs for Crosstalk Mitigation Based on Voltage Inverters

SiC MOSFETs generally suffer more severe crosstalk issue than Si devices due to their fast-switching speeds. The crosstalk problem can reduce system reliability and introduce additional losses, limiting the performance of SiC MOSFETs. In this article, an active gate driver (AGD) circuit is proposed to mitigate the crosstalk issue of SiC MOSFETs. Regarding the proposed AGD circuit, the drain–source voltage is sampled, scaled, and inverted in the switching processes, and then the displacement current induced by d<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i>/d<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</i> is extracted or pumped to the gate node. The crosstalk voltages can be suppressed effectively, and the switching speeds are also enhanced. Additionally, compared with other gate driver circuits, the proposed AGD circuit has low-power losses, while the active auxiliary components do not require additional control signals, simplifying the driving circuit design. Finally, the effectiveness of the proposed method is validated by experiments at various operating conditions. The results indicate that the proposed method can effectively reduce the crosstalk voltages below the safety threshold and improve the switching speeds of SiC MOSFETs.