Epitaxial growth of Yb/Er co-doped HfO2 films with coexisting ferroelectric and luminescent properties

We report on the fabrication of high-quality Yb3+ and Er3+ co-doped HfO2 epitaxial films using pulsed laser deposition. The host material HfO2 has relatively low phonon energy, which is desirable to inhibit the nonradiative relaxation. The dopant Yb3+ is used to stabilize the ferroelectric o-phase and also acts as the sensitizer to enhance the optical absorption cross section, while Er3+ is the luminescence activator. The films exhibit robust ferroelectricity with a remanent polarization of 12 μC/cm2 and comparable endurance performance to HfO2-based epitaxial films reported before. The up- and downconversion luminescence properties were ascertained by photoluminescence spectroscopy. The Yb3+/Er3+ co-doped HfO2 films with coexisting ferroelectric and luminescent functionalities may suggest a promising approach toward electric field tunable phosphors.

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Publication Details

Journal
Applied Physics Letters
Published
2025-05-26
DOI
https://doi.org/10.1063/5.0264399
Citations
1
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.73

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article

Epitaxial growth of Yb/Er co-doped HfO2 films with coexisting ferroelectric and luminescent properties

Yingjia Li, Xiaoyu Qiu, Ni Zhong, Zhao Guan et al.
1 citations
Applied Physics Letters
Ferroelectric and Negative Capacitance Devices
0.73
article

Epitaxial growth of Yb/Er co-doped HfO2 films with coexisting ferroelectric and luminescent properties

Yingjia Li, Xiaoyu Qiu, Ni Zhong, Zhao Guan, Ping‐Hua Xiang, Yujie Zhou, Jie Tu, Zijian Chen, Binbin Chen, Zhou Chen, Xiang Xu, Eric X. Tang
article en
1 citations

Abstract

We report on the fabrication of high-quality Yb3+ and Er3+ co-doped HfO2 epitaxial films using pulsed laser deposition. The host material HfO2 has relatively low phonon energy, which is desirable to inhibit the nonradiative relaxation. The dopant Yb3+ is used to stabilize the ferroelectric o-phase and also acts as the sensitizer to enhance the optical absorption cross section, while Er3+ is the luminescence activator. The films exhibit robust ferroelectricity with a remanent polarization of 12 μC/cm2 and comparable endurance performance to HfO2-based epitaxial films reported before. The up- and downconversion luminescence properties were ascertained by photoluminescence spectroscopy. The Yb3+/Er3+ co-doped HfO2 films with coexisting ferroelectric and luminescent functionalities may suggest a promising approach toward electric field tunable phosphors.

Applied Physics LettersVol. 126(21)
East China Normal University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 28%
Ferroelectric and Negative Capacitance Devices
0.73
DOISourceOpenAlex
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Epitaxial growth of Yb/Er co-doped HfO2 films with coexisting ferroelectric and luminescent properties — Yingjia Li, Xiaoyu Qiu, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS